Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction
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Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thic...
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Rights: © 1997 American Institute of Physics. This is the accepted version of the following article: Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650, which has been published in final form at ...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2016
ISSN: 2041-1723
DOI: 10.1038/ncomms10349